Full band Monte Carlo simulation of AlInAsSb digital alloys
Published in InfoMat, 2020
Recommended citation: Zheng, Jiyuan, Sheikh Z. Ahmed, Yuan Yuan, Andrew Jones, Yaohua Tan, Ann K. Rockwell, Stephen D. March, Seth R. Bank, Avik W. Ghosh, and Joe C. Campbell. "Full band Monte Carlo simulation of AlInAsSb digital alloys." InfoMat 2, no. 6 (2020): 1236-1240. https://onlinelibrary.wiley.com/doi/full/10.1002/inf2.12112
Abstract: Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise. In this article, we investigate the band structure-related mechanisms that influence impact ionization. Band-structures calculated using an empirical tight-binding method and Monte Carlo simulations reveal that the mini-gaps in the conduction band do not inhibit electron impact ionization. Good agreement between the full band Monte Carlo simulations and measured noise characteristics is demonstrated.
Recommended citation: Zheng, Jiyuan, Sheikh Z. Ahmed, Yuan Yuan, Andrew Jones, Yaohua Tan, Ann K. Rockwell, Stephen D. March, Seth R. Bank, Avik W. Ghosh, and Joe C. Campbell. “Full band Monte Carlo simulation of AlInAsSb digital alloys.” InfoMat 2, no. 6 (2020): 1236-1240.