Near ultraviolet enhanced 4H-SiC Schottky diode
Published in Applied Physics Letters, 2019
Recommended citation: Shen, Yang, Andrew H. Jones, Yuan Yuan, Jiyuan Zheng, Yiwei Peng, Brenda VanMil, Kimberley Olver et al. "Near ultraviolet enhanced 4H-SiC Schottky diode." Applied Physics Letters 115, no. 26 (2019): 261101. https://aip.scitation.org/doi/10.1063/1.5129375
Abstract: Silicon carbide Schottky diodes with thick i-regions are reported. Compared with previously reported p-i-n photodiodes, a shift of the absorption peak from 270 nm to 350 nm was observed. The responsivity curves of the Schottky diode are modeled and compared with the experimental data.
Recommended citation: Shen, Yang, Andrew H. Jones, Yuan Yuan, Jiyuan Zheng, Yiwei Peng, Brenda VanMil, Kimberley Olver et al. “Near ultraviolet enhanced 4H-SiC Schottky diode.” Applied Physics Letters 115, no. 26 (2019): 261101.