Strain effect on band structure of InAlAs digital alloy
Published in Journal of Applied Physics , 2019
Recommended citation: Zheng, J., Y. Tan, Y. Yuan, A. W. Ghosh, and J. C. Campbell. "Strain effect on band structure of InAlAs digital alloy." Journal of Applied Physics 125, no. 8 (2019): 082514. https://aip.scitation.org/doi/abs/10.1063/1.5045476
Recently, InAlAs digital alloys have been shown to exhibit unique electronic dispersion properties, which can be used to make low-noise avalanche photodiodes. In this paper, the strain effect is analyzed for its impact on the band structure of the InAlAs digital alloy. Simulation using a tight binding model that includes the strain effect yields bandgap energies that are consistent with experimental results. The bandgap would be larger without strain. In addition, a positive relationship has been found between minigaps of the InAlAs digital alloy and the band offset between bulk InAs and AlAs at the same position in k-space.
Recommended citation: Zheng, J., Y. Tan, Y. Yuan, A. W. Ghosh, and J. C. Campbell. “Strain effect on band structure of InAlAs digital alloy.” Journal of Applied Physics 125, no. 8 (2019): 082514.