High Gain, Low Dark Current Al0.8In0.2As0.23Sb0.77 Avalanche Photodiodes
Published in IEEE Photonics Technology Letters, 2019
Recommended citation: Jones, Andrew H., Ann-Kathryn Rockwell, Stephen D. March, Yuan Yuan, Seth R. Bank, and Joe C. Campbell. "High Gain, Low Dark Current Al 0.8 In 0.2 As 0.23 Sb 0.77 Avalanche Photodiodes." IEEE Photonics Technology Letters 31, no. 24 (2019): 1948-1951. https://ieeexplore.ieee.org/document/8892636
Abstract: We report Al0.8In0.2As0.23Sb0.77 avalanche photodiodes with high gain (M>1300) and low dark current at room temperature. Impact ionization coefficients for this material system are also extracted, indicating electron-dominant impact ionization. Low avalanche breakdown temperature dependence is demonstrated.
Recommended citation:Jones, Andrew H., Ann-Kathryn Rockwell, Stephen D. March, Yuan Yuan, Seth R. Bank, and Joe C. Campbell. “High Gain, Low Dark Current Al 0.8 In 0.2 As 0.23 Sb 0.77 Avalanche Photodiodes.” IEEE Photonics Technology Letters 31, no. 24 (2019): 1948-1951.