Simulations for InAlAs digital alloy avalanche photodiodes
Published in Applied Physics Letters, 2019
Recommended citation: Zheng, J., Y. Yuan, Y. Tan, Y. Peng, A. Rockwell, S. R. Bank, A. W. Ghosh, and J. C. Campbell. "Simulations for InAlAs digital alloy avalanche photodiodes." Applied Physics Letters 115, no. 17 (2019): 171106. https://aip.scitation.org/doi/10.1063/1.5114918
3D band structure-based Monte Carlo simulations have been utilized to simulate InAlAs digital alloy avalanche photodiodes. The simulated current–voltage curve and excess noise factor fit well with experimental results. Ionization coefficients calculated by the Monte Carlo technique were incorporated into the recurrence model, which is easier to implement and requires less computation time.
Recommended citation: Zheng, J., Y. Yuan, Y. Tan, Y. Peng, A. Rockwell, S. R. Bank, A. W. Ghosh, and J. C. Campbell. “Simulations for InAlAs digital alloy avalanche photodiodes.” Applied Physics Letters 115, no. 17 (2019): 171106.