64 Gbps PAM4 Si-Ge waveguide avalanche photodiodes with excellent temperature stability
Published in Journal of Lightwave Technology, 2020
Recommended citation: Yuan Yuan, Zhihong Huang, Binhao Wang, Wayne V Sorin, Xiaoge Zeng, Di Liang, Marco Fiorentino, Joe C Campbell, and Raymond G Beausoleil. "64 Gbps PAM4 Si-Ge waveguide avalanche photodiodes with excellent temperature stability." Journal of Lightwave Technology 38, no. 17 (2020): 4857-4866. https://opg.optica.org/abstract.cfm?uri=jlt-38-17-4857
A Si-Ge waveguide avalanche photodiode with extremely high temperature stability is demonstrated. The breakdown voltage increases ~4.2 mV/C, bandwidth reduces ~0.09%/C, and gain-bandwidth product reduces ~0.24%/C with temperature increased from 30 C to 90 C. Additionally, it maintains superior performance with low breakdown voltage of ~10 V, high multiplication gain of >15, high bandwidth of ~24.6 GHz, high gain-bandwidth product of >240 GHz, high internal quantum efficiency of ~100%, and clear eye diagrams with 64 Gbps PAM4 modulation at 90 C.
Recommended citation: Yuan Yuan, Zhihong Huang, Binhao Wang, Wayne V Sorin, Xiaoge Zeng, Di Liang, Marco Fiorentino, Joe C Campbell, and Raymond G Beausoleil. “64 Gbps PAM4 Si-Ge waveguide avalanche photodiodes with excellent temperature stability.” Journal of Lightwave Technology 38, no. 17 (2020): 4857-4866.