64 Gb/s low-voltage waveguide SiGe avalanche photodiodes with distributed Bragg reflectors (Editor Pick)
Published in Photonics Research, 2020
Recommended citation: Wang, Binhao, Zhihong Huang, Yuan Yuan, Di Liang, Xiaoge Zeng, Marco Fiorentino, and Raymond G. Beausoleil. "64 Gb/s low-voltage waveguide SiGe avalanche photodiodes with distributed Bragg reflectors." Photonics Research 8, no. 7 (2020): 1118-1123. https://opg.optica.org/prj/fulltext.cfm?uri=prj-8-7-1118&id=432418
Abstract: We demonstrate low-voltage waveguide silicon-germanium avalanche photodiodes (APDs) integrated with distributed Bragg reflectors (DBRs). The internal quantum efficiency is improved from 60% to 90% at 1550 nm assisted with DBRs while still achieving a 25 GHz bandwidth. A low breakdown voltage of 10 V and a gain bandwidth product of near 500 GHz are obtained. APDs with DBRs at a data rate of 64 Gb/s pulse amplitude modulation with four levels (PAM4) show a 30% - 40% increase in optical modulation amplitude (OMA) compared to APDs with no DBR. A sensitivity of around -13 Bm at a data rate of 64 Gb/s PAM4 and a bit error rate of 2.4x10^-4 is realized for APDs with DBRs, which improves the sensitivity by ~2 B compared to APDs with no DBR.
Recommended citation: Wang, Binhao, Zhihong Huang, Yuan Yuan, Di Liang, Xiaoge Zeng, Marco Fiorentino, and Raymond G. Beausoleil. “64 Gb/s low-voltage waveguide SiGe avalanche photodiodes with distributed Bragg reflectors.” Photonics Research 8, no. 7 (2020): 1118-1123.