A 100 Gb/s PAM4 Two-Segment Silicon Microring Resonator Modulator Using a Standard Foundry Process (Supplementary Cover)
Published in ACS Photonics, 2022
Recommended citation: Yuan Yuan, Wayne V Sorin, Zhihong Huang, Xiaoge Zeng, Di Liang, Ankur Kumar, Samuel Palermo, Marco Fiorentino, and Raymond G Beausoleil. "A 100 Gb/s PAM4 Two-Segment Silicon Microring Resonator Modulator Using a Standard Foundry Process." ACS Photonics 9, no. 4 (2022): 1165-1171. https://pubs.acs.org/doi/abs/10.1021/acsphotonics.1c01389
A compact two-segment depletion mode silicon microring resonator modulator with PAM4 modulation data rate up to 100 Gb/s has been demonstrated. The microring resonator modulator exhibits a free spectrum range of ~5.7 nm, a quality factor of ~3600, a DC extinction ratio of ~13 dB, an electro-optical phase shift efficiency VpiL of ~1 Vcm, and an electro-optical bandwidth of ~40 GHz.
Recommended citation: Yuan Yuan, Wayne V Sorin, Zhihong Huang, Xiaoge Zeng, Di Liang, Ankur Kumar, Samuel Palermo, Marco Fiorentino, and Raymond G Beausoleil. “A 100 Gb/s PAM4 Two-Segment Silicon Microring Resonator Modulator Using a Standard Foundry Process.” ACS Photonics 9, no. 4 (2022): 1165-1171.