Comparison of Different Period Digital Alloy AlInAsSb Avalanche Photodiodes
Published in Journal of Lightwave Technology, 2019
Recommended citation: Yuan Yuan, Ann Kathryn Rockwell, Yiwei Peng, Jiyuan Zheng, Stephen D March, Andrew H Jones, Min Ren, Seth R Bank, and Joe C Campbell. "Comparison of Different Period Digital Alloy AlInAsSb Avalanche Photodiodes." Journal of Lightwave Technology 37, no. 14 (2019): 3647-3654. https://opg.optica.org/abstract.cfm?uri=jlt-37-14-3647
We report Al0.7InAsSb avalanche photodiodes grow as ternary-binary and binary-binary digital alloys. Their characteristics of ideality factor, activation energy, temperature-dependent excess noise, temperature stability, and impact ionization coefficients are compared.
Recommended citation: Yuan Yuan, Ann Kathryn Rockwell, Yiwei Peng, Jiyuan Zheng, Stephen D March, Andrew H Jones, Min Ren, Seth R Bank, and Joe C Campbell. “Comparison of Different Period Digital Alloy AlInAsSb Avalanche Photodiodes.” Journal of Lightwave Technology 37, no. 14 (2019): 3647-3654.