AlInAsSb Impact Ionization Coefficients
Published in IEEE Photonics Technology Letters, 2019
Recommended citation: Yuan, Yuan, Jiyuan Zheng, Ann K. Rockwell, Stephen D. March, Seth R. Bank, and Joe C. Campbell. "AlInAsSb impact ionization coefficients." IEEE Photonics Technology Letters 31, no. 4 (2019): 315-318. https://ieeexplore.ieee.org/document/8620234
Digital alloy AlInAsSb avalanche photodiodes exhibit low excess noise comparable to those fabricated from Si. The electron and hole ionization coefficients are critical parameters for simulation and analysis of high-sensitivity receivers. We report ionization coefficients using a mixed injection technique that employs measurement of the gain for different incident wavelengths and a simulation algorithm.
Recommended citation: Yuan, Yuan, Jiyuan Zheng, Ann K. Rockwell, Stephen D. March, Seth R. Bank, and Joe C. Campbell. “AlInAsSb impact ionization coefficients.” IEEE Photonics Technology Letters 31, no. 4 (2019): 315-318.