Conference Talk, Frontiers in Optics and Laser Science (FiO+LS), Tacoma, Washington
The feasibility of an all-Si, high-speed DWDM optical interconnect has been demonstrated with the Si microring-based transmitter and receiver that enables single-lane throughput of 160 Gb/s and 128 Gb/s.
Conference Talk, Asia Communications and Photonics Conference (ACP), Shanghai, China
Workshop: Heterogeneous Photonic Integration on Silicon
Conference Talk, Integrated Photonics Research, Silicon and Nanophotonics (IPR), Burlingame, California
We demonstrate the first III-V avalanche photodiodes grown directly on silicon byheteroepitaxy. The InGaAs/InAlAs APD exhibits gain >20, low dark current, quantum efficiency >40%, and low excess noise (k value ~ 0.2).
Conference Talk, IEEE Photonics Conference (IPC), Reston, Virginia
Digital alloy In0.52Al0.48 As avalanche photodiodes exhibit lower excess noise than those fabricated from random alloys. This paper compares the temperature dependence, from 203K to 323K, of the impact ionization characteristics of In0.52Al0.48As and Al0.74Ga0.26As digital and random alloys. These results provide insight into the low excess noise exhibited by some digital alloy materials, and these materials can even obtain lower excess noise at low temperature.