High responsivity Si-Ge waveguide avalanche photodiodes enhanced by loop reflector
Published in IEEE Journal of Selected Topics in Quantum Electronics, 2021
Recommended citation: Yuan Yuan, Zhihong Huang, Xiaoge Zeng, Di Liang, Wayne V Sorin, Marco Fiorentino, and Raymond G Beausoleil. "High responsivity Si-Ge waveguide avalanche photodiodes enhanced by loop reflector." IEEE Journal of Selected Topics in Quantum Electronics 28, no. 2 (2021): 1-8. https://ieeexplore.ieee.org/abstract/document/9448380/
We present a loop reflector-assisted silicon-germanium waveguide avalanche photodiode with improved responsivity. Compared to the same APD without the reflector, it has 1.49 times higher responsivity, ~1.12 A/W, without compromising the speed performance. It exhibits a 3 dB-bandwidth of ~25 GHz, a build-up time limited gain-bandwidth product of ~296 GHz, a highest gain-bandwidth product of ~497 GHz. Clear eye diagrams are measured at both 32 Gbps NRZ and 64 Gbps PAM4 modulation, and a 1~2 dB better sensitivity up to -15.7 dBm with 32 Gbps NRZ at a BER of 2.4e-4.
Recommended citation: Yuan Yuan, Zhihong Huang, Xiaoge Zeng, Di Liang, Wayne V Sorin, Marco Fiorentino, and Raymond G Beausoleil. “High responsivity Si-Ge waveguide avalanche photodiodes enhanced by loop reflector.” IEEE Journal of Selected Topics in Quantum Electronics 28, no. 2 (2021): 1-8.