III-V on silicon avalanche photodiodes by heteroepitaxy
Published in Optics letters, 2019
Recommended citation: Yuan Yuan, Daehwan Jung, Keye Sun, Jiyuan Zheng, Andrew H Jones, John E Bowers, and Joe C Campbell. "III-V on silicon avalanche photodiodes by heteroepitaxy." Optics letters 44, no. 14 (2019): 3538-3541. https://opg.optica.org/abstract.cfm?uri=ol-44-14-3538
We demonstrate a III-V avalanche photodiode (APD) grown by heteroepitaxy on silicon. This InGaAs/InAlAs APD exhibits low dark current, gain >20, external quantum efficiency >40%, and similar low excess noise, k~0.2, as InAlAs APDs on InP.
Recommended citation: Yuan Yuan, Daehwan Jung, Keye Sun, Jiyuan Zheng, Andrew H Jones, John E Bowers, and Joe C Campbell. “III-V on silicon avalanche photodiodes by heteroepitaxy.” Optics letters 44, no. 14 (2019): 3538-3541.