Al0.8In0.2As0.23Sb0.77 Avalanche Photodiodes
Published in IEEE Photonics Technology Letters, 2018
Recommended citation: Rockwell, Ann-Katheryn, Yuan Yuan, Andrew H. Jones, Stephen D. March, Seth R. Bank, and Joe C. Campbell. "Al 0.8 In 0.2 As 0.23 Sb 0.77 Avalanche Photodiodes." IEEE Photonics Technology Letters 30, no. 11 (2018): 1048-1051. https://ieeexplore.ieee.org/document/8338119
We report avalanche photodiodes (APDs) fabricated from the digital alloy Al0.8In0.2As0.23Sb0.77 (lattice-matched to GaSb). The APDs exhibit high avalanche multiplication and low excess noise.
Recommended citation: Rockwell, Ann-Katheryn, Yuan Yuan, Andrew H. Jones, Stephen D. March, Seth R. Bank, and Joe C. Campbell. “Al 0.8 In 0.2 As 0.23 Sb 0.77 Avalanche Photodiodes.” IEEE Photonics Technology Letters 30, no. 11 (2018): 1048-1051.